Fundamentals of III-V Semiconductor MOSFETs

"Fundamentals of III-V Semiconductor MOSFETs" offers a comprehensive introduction to the fundamentals and current state of research on metal-oxide-semiconductor field-effect transistors (MOSFETs) made from III-V semiconductors. These transistors are considered potential successors to silicon in digital circuits. The book addresses the specific properties of III-V semiconductors and the technologies that make them attractive for MOSFET technology, including band-engineered heterostructures and nanoscale control during epitaxial growth. A central theme is the challenge of developing a high-quality, thermodynamically stable gate dielectric that passivates interface states, similar to SiO2 in silicon. The work provides detailed insights into the materials science and electronic behavior of various dielectrics, as well as the physics of the fabricated devices and the technologies for MOSFET manufacturing. It also discusses recent advances and challenges in integrating different semiconductor materials on silicon platforms.