Application of Pelletron Accelerator to Study Total Dose Radiation

The textbook "Application of Pelletron Accelerator to Study Total Dose Radiation" provides a comprehensive analysis of the effects of ionizing radiation on metal-oxide-semiconductor (MOS) and bipolar devices. It examines how this radiation leads to a deterioration of the electrical properties of the devices by generating surface and oxide charges as well as point defects. To ensure the functionality of these devices in radiation-rich environments, such as in space, it is crucial to understand the various radiation effects. The book documents experiments in which N-channel depletion MOSFETs and silicon NPN transistors were irradiated with heavy ions, comparing the results with gamma irradiation. The detailed analysis of the I-V characteristics of the devices is supported by the use of modern measurement techniques.