Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

The book "Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor" offers a comprehensive analysis of the impact of breakdown voltage (BV) on transistor-based graphene structures. It discusses analytical approaches and models focusing on the properties of graphene nanoribbon field effect transistors (GNRFETs). The authors present semi-analytical models that examine various aspects such as the lateral electric field, the length of the velocity saturation region (LVSR), and the ionization coefficient. By applying Gauss's law in the drain and source regions, equations for the surface potential and the lateral electric field are derived. The work provides valuable insights into the optimization of semiconductor devices and sensors by analyzing the BV under different conditions. The results indicate that the operating voltage of FETs can be reduced to as low as 0.25 V to avoid breakdown, and can be increased to up to 1.5 V after optimization.